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Company News >> JDI plans to begin mass production of flexible LCD panels in 2018 13th,Apr,2017
                                            At the beginning of 2017, the Japanese display (JDI) announced the development of technology called Full Active Flex. The technology used in the LCD panel plastic substrate, so flexible TFT LCD design. It will first be applied to the smartphone's 5.5 '' Full HD LCD panel. JDI has demonstrated samples at its technology show. JDI plans to begin production in 2018 Full Active Flex flexible LCD panel.
                                  At present, AMOLED uses its advanced flexible display design to lead the smart phone panel market, such as the Samsung Galaxy Edge series of curved edge display panel. Apple is also using AMOLED in its 2017 new iPhone. In the mobile device market, AMOLED continues to challenge the TFT LCD technology, Samsung Display (SDC) has been in the AMOLED market has occupied a decade of dominance. 2016 Samsung AMOLED panel production capacity and shipments reached nearly 400 million, and in 2017 challenges more than 500 million.
In order to catch up with the Samsung display and the upsurge of OLED, many panel makers, especially in mainland China's panel mills such as BOE, Tianma, China Star, Guocheng, and Hui and so on are investing in flexible AMOLED panel factory, the goal after 2018 Mass production. However, due to the use of fine metal mask evaporation process, to achieve AMOLED production is quite difficult. In order to avoid direct competition with the Samsung display, JDI to take a different strategy in the development of flexible OLED also use TFT LCD development Full Active Flex panel, rather than simply lock the flexible screen in AMOLED.
                                  Due to the autonomous light-emitting technology, OLEDs can be used in displays with flexible (polyimide, that is, Polyimide) substrates. However, TFT LCD can not easily achieve this because it is a high temperature process and requires LED backlighting. In order to develop Full Active Flex, JDI improved every stage of the LCD panel and LCD module assembly process, including the use of new materials and new technologies. IHS Markit has conducted an extremely detailed analysis of the new JDI technology.
First, JDI for Full Active Flex improved a variety of new TFT panel technology as follows.
                                 AMOLED Due to the self-luminous structure, there is no need for a thin film substrate with high light transmittance. However, TFT LCD requires backlighting. TFT film substrate requires high transmittance, but can not have color, otherwise affect the backlight efficiency. The polyimide film substrate, which is generally used for flexible AMOLED substrates, is orange and has a low transmittance; therefore, flexible lithium panels can not use conventional flexible polyimide films.
                                 As a replacement, JDI has developed a new thin film substrate for flexible LCD panels. This new thin film substrate can not only resist high temperature TFT light process, and high penetration. At the same time JDI improved the film substrate processing technology, so this new substrate will not affect the LCD panel birefringence effect.
JDI did not disclose the source of supply for this new film substrate material. IHS Markit speculates that it is a transparent and colorless polyimide film developed by many different Japanese thin film and chemical materials manufacturers.
Application of the new LTOS (low temperature metal oxide) TFT technology
                                 Even if a substrate resistant to high temperatures is used, the annealing process in the TFT array process may damage the film substrate. In other words, the temperature of the array of TFTs is higher than that of the OLED, and the flexible substrate can not resist such high temperatures. As a result, JDI has developed the latest Low Temperature Oxide Semiconductor (LTOS) process.
                                 At present, the mainstream technology of liquid crystal panel is divided into amorphous silicon (a-Si), low temperature polysilicon (LTPS) and metal oxide (Oxide), and JDI LTOS is low temperature polysilicon and metal oxide combination.
                                 Although known as "low temperature", the current mainstream low temperature polysilicon (LTPS) TFT process requires about 500 degrees in the annealing process to crystallize polysilicon. LTOS uses oxide semiconductors that can achieve high electron mobility without annealing. This ensures that the crystallization process does not damage the film substrate.
                                 In May 2016, JDI announced a joint technology agreement with Japan's Semiconductor Energy Laboratory (SEL), which previously developed a IGZO (indium gallium zinc oxide) TFT technology with Sharp. With the addition of SEL, JDI will develop an LTOS TFT array for deposition in a lower temperature process.

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